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2SK1625(L), 2SK1625(S)
Silicon N-Channel MOS FET
November 1996 Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
LDPAK 4 4
12 1 D G 2 3
3
S
1. Gate 2. Drain 3. Source 4. Drain
2SK1625(L), 2SK1625(S)
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg
2 1
Ratings 600 30 7 28 7 75 150 -55 to +150
Unit V V A A A W C C
2
2SK1625(L), 2SK1625(S)
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) 600 30 -- -- 2.0 -- 4.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.9 6.5 1180 265 50 15 50 105 45 0.9 370 Max -- -- 10 250 3.0 1.3 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF/dt = 100 A/s ID = 4 A, VGS = 10 V, RL = 7.5 Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V * ID = 4 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz
1
Zero gate voltage drain current IDSS Gate to source cutoff voltage Static Drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr
1
See characteristic curves of 2SK1403.
3
2SK1625(L), 2SK1625(S)
Power vs. Temperature Derating 120 Channel Dissipation Pch (W) 50 30 Drain Current ID (A) 10 3 1 0.3 0.1 0.05 0 50 100 Case Temperature TC (C) 150 1 10 100 300 1,000 3 30 Drain to Source Voltage VDS (V) Ta = 25C Maximum Safe Operation Area
O is pe lim ra ite tion d in by t R his D
(o
n)
ar ea
80
D
C
PW
O
10
10
S
0
40
1 = pe 10 ms ra m tio s n (1 (T Sh C= ot 25 ) C )
s
s
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2
0.1
0.05
1.0
TC = 25C
ch-c (t) = S (t) * ch-c ch-c = 1.67C/W, TC = 25C PDM PW D = PW T
0.02
0.03
0.01 10
lse 1 0.0 ot Pu h 1S
100 1m 10 m Pulse Width PW (s) 100 m
T
1
10
4
2SK1625(L), 2SK1625(S)
Notice
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071
5

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